饮水沟堆积体抢险加固工程监测成果及预警分析

根据饮水沟堆积体边坡变形特征,采用数学模型对边坡稳定性进行了综合预测分析,及时提出边坡异常变形的预警;结合开挖、降雨、排水以及加固处理等因素,对监测成果进行分析,论证边坡变形机理,实时分析抢险加固效果,为制定抢险方案以及调整加固参数、优化施工组织和加快工程进度等提供了科学依据,是成功预警并高效治理大规模变形体边坡的典型工程案例,可供类似工程参考。     

An optimization model for placement of wavelength converters to minimize blocking probability in WDM networks

The introduction of wavelength converters in wavelength division multiplexing (WDM) networks can reduce the blocking probabilities of calls. In this paper, we study the problem of placing a given number of converters in a general topology WDM network such that the overall system blocking probability is minimized. The original contributions of this work are the following: 1) formulation of success probability in a network as a polynomial function of the locations of converters; 2) proposal of an optimization model of the converter placement problem as the minimization of a polynomial function of 0-1 variables under a linear constraint, so that standard optimization tools can be employed to solve the problem; and 3) design of a search algorithm that can efficiently find the optimal solution to the converter placement problem. Experiments have been conducted to demonstrate the effectiveness of the proposed model and the efficiency of the algorithm.     

An Exploratory Study of E-Business Success Factors

E-business success factors are Important for traditional enterprises to implement e-business. This topic is attracting more and more researchers to study. This paper makes an exploratory study on the factors influencing e-business success. Firstly, based on the literature review, 52 factors are suggested. Secondly, two rounds of survey with Delphi method are conducted. Qualitative and quantitative analysis are used to identify 57 factors. This is the foundation of empirical study.     

Reliability investigation of 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel

The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications.     

微机械可调谐滤波器的研制

利用 Ga As/Al Ga As分布反馈 Bragg反射镜在 Ga As衬底上制作了一个微机械的调谐滤波器 .该器件在 7V调谐电压下调谐范围达28nm     

Study of different methods for enhancing the nitrate removal efficiency of a zero-valent metal process.

This study explores the effect of several enhancing methods, namely acid wash pretreatment, ultrasound treatment and addition of nickel catalyst on the nitrate removal efficiency of three zero-valent metals--iron, aluminium and zinc. It is hoped that by learning about the major reaction pathways of nitrate removal with zero-valent metals and the main factors influencing the reactivity of those zero-valent metals, optimum process conditions may be identified. The study results show that direct transfer of electrons is the major reaction pathway. Thus increasing a clean, fresh metal surface and decreasing the thickness of the diffusion layer to accelerate mass transfer are the main determinants of reaction rate. In the absence of a clean, fresh metal surface, the catalytic reaction of nickel becomes the primary removal pathway.     

多晶硅衬底上的RF MEMS开关

在微机械开关与硅IC工艺设计和兼容方面进行了改进,获得了一种可与IC工艺兼容的RFMEMS微机械开关.采用介质隔离工艺技术把这种RFMEMS微机械开关制作在绝缘的多晶硅衬底上,实现了与IC工艺兼容;采用在金属膜桥的端点附近刻蚀一些孔的优化方法,降低了RFMEMS微机械开关的下拉电压.用TE2 819电容测试设备测试开关的电容,测得开关的开态电容、关态电容和致动电压分别为0 32 pF、6 pF和2 5V .用HP875 3C网络分析仪对RFMEMS微机械开关进行了RF特性测试,得出RFMEMS微机械开关在频率1 5GHz下关态的隔离度为35dB ,开态的插入损耗为2dB ,用示波器测得该开关的开关     

广州蓄能水电厂运行与管理的现代化

介绍了广州蓄能水电厂的基本情况，其借鉴国外电站管理的先进经验，从设备在线监控 到运行、检修、生产管 理和办公均全面应用以计算机为核心的自动化系统及计算机网络技术，为提高机组安全可靠 运行、电站的管理水平和减人增效方面发挥了很好作用。文中着重介绍广州蓄能水电厂的运 行管理方式及值班规则、生产管理和设备管理方法、办公自动化经验以及相关的规章制度。     

InP D-HBT ICs for 40-Gb/s and higher bitrate lightwave transceivers

The combination of device speed (f/sub T/, f/sub max/ > 150 GHz) and breakdown voltage (V/sub bceo/ > 8 V) makes the double heterojunction bipolar InP-based transistor (D-HBT) an attractive technology to implement the most demanding analog functions of 40-Gb/s transceivers. This is illustrated by the performance of a number of analog circuits realized in an InP D-HBT technology with an 1.2- or 1.6-/spl mu/m-wide emitter finger: a low phase noise push-push voltage-controlled oscillator with -7-dBm output power at 146 GHz, a 40-GHz bandwidth and low-jitter 40-Gb/s limiting amplifier, a lumped 40-Gb/s limiting driver amplifier with 4.5-V/sub pp/ differential output swing, a distributed 40-Gb/s driver amplifier with 6-V/sub pp/ differential output swing, and a number of distributed preamplifiers with up to 1.3-THz gain-bandwidth product.